Potlog, TamaraBotnariuc, VasileGorceac, LeonidSpalatu, NicolaeMaticiuc, NataliaRaevschi, Simion2024-09-302024-09-302010-10-11POTLOG, Tamara; Vasile BOTNARIUC; Leonid GORCEAC; Nicolae SPALATU; Natalia MATICIUC și Simion RAEVSCHI. The caracterization of the CdS-based solar cell heterojunctions. In: Proceedings of the International Semiconductor Conference: CAS, eduția a 33-a, 11-13 octombrie 2010, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2010, vol. 1, pp. 105-108.978-1-4244-5781-6https://msuir.usm.md/handle/123456789/16202https://doi.org/10.1109/SMICND.2010.5650233The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method(CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.ensolar cell heterojunctiondark forward-bias currentcapacitance-voltage and photovoltaic characteristicsArticle