Leontie, L.Sprincean, VeaceslavSpaltu, N.Cojocaru, A.Susu, AnaLupan, OlegVatavu, ElmiraCarlescu, AurelianUntila, DumitruCaraman, IulianaEvtodiev, IgorTiginyanu, IonCaraman, Mihail2021-12-062021-12-062019LEONTIE, L., SPRINCEAN, V. et al. Synthesis and optical properties of Ga2O3 nanowires grown on GaS substrate. In: Thin Solid Films. 2019, Vol.689, 137502. ISSN 0040-6090.0040-6090https://www.sciencedirect.com/science/article/abs/pii/S0040609019305309?via%3Dihubhttps://msuir.usm.md/handle/123456789/5097Gallium oxide (β-Ga2O3) nanowires were synthesized by heat treatment of single crystal β-GaS plates in air. Crystal structure and composition of synthesized materials were studied by X-ray diffraction, energy dispersive X-ray spectroscopy and Raman spectroscopy. Thermal treatment of β-GaS plates at 1023 K leads to the formation of a Ga2O3 (native oxide) layer on β-GaS (0001) surface of plates. Layer thickness and size of Ga2O3 wires contained were found to depend on temperature and duration of applied heat treatment. For 1023 K and 6 h, the length of Ga2O3 wires laid in the range from units to tens of nanometers, while for 1123 K and 30 min, between 30 and 40 μm.engallium(III) trioxidegallium(III) sulfideoxidationstructural propertiesphotoluminescenceoptical propertiesArticle