Sprincean, VeaceslavHaoyi, QiuLupan, OlegTjardts, TimPetersen, DeikVeziroglu, SalihAdelung, RainerCaraman, Mihail2024-09-162024-09-162024SPRINCEAN, Veaceslav; Haoyi QIU; Oleg LUPAN; Tim TJARDTS; Deik PETERSEN; Salih VEZIROGLU; Rainer ADELUNG și Mihail CARAMAN. Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates. Materials Science in Semiconductor Processing, 2024. vol. 172, pp. 1-8. ISSN 1369-8001.1369-8001https://msuir.usm.md/handle/123456789/16040https://doi.org/10.1016/j.mssp.2023.108040SPRINCEAN, Veaceslav; Haoyi QIU; Oleg LUPAN; Tim TJARDTS; Deik PETERSEN; Salih VEZIROGLU; Rainer ADELUNG și Mihail CARAMAN. Synthesis and properties of β-Ga2O3 nanowires and nanosheets on doped GaS:Mn substrates. Materials Science in Semiconductor Processing, 2024. vol. 172, pp. 1-8. ISSN 1369-8001.In this work, the synthesis, morphology, optical and luminescence properties of Mn-doped β-Ga2O3 (Ga2O3:Mn) nanowires/nanosheets on Mn-doped GaS (GaS:Mn) substrate are studied. The aim was to obtain structures of semiconductors with layers of nanoformations (nanowires, nanosheets) from a wide energy band semiconductor such as β-Ga2O3 and to determine their characteristic properties. For the base material, Mn-doped GaS lamellae were chosen, which are optically transparent in the spectral region where the optical properties of Mn2+ and Mn3+ ions are manifested. Through thermal annealing, single-crystalline β-GaS plates doped with 1.3 atomic percent (at.%) of manganese (Mn) are exposed to an atmosphere enriched with H2O vapor at a temperature of 800 ◦C for 6 h. As a result, the surface of these plates is covered with a composite layer consisting of crystallites of α-Ga2S3:Mn and β-GaS:Mn planar junctions. This composite exhibits a direct band gap of 2.88 eV and an indirect band gap of 2.55 eV corresponding to the β-GaS:Mn crystallites. Upon further increasing the temperature during thermal annealing to 850 ◦ C and 920 ◦C, the surface of the β-GaS:Mn samples transform into a layer of β-Ga2O3: Mn nanowires/nanosheets with a band gap of 4.5 eV. Its intense green-orange photoluminescence is caused by electronic transitions within the Mn2+ ion.enGallium oxideGallium sulfideManganeseNanowiresNanosheetsDopingArticle