Belenciuc, Alexandr2024-10-082024-10-082000-10-10BELENCIUC, Alexandr. Hot wall beam epitaxial growth of PbTe layers on BaF2/CaF2/Si(III) substrates. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 23, Octomber 10-14th 2000, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2000, Vol. 1, pp. 143-146.0-7803-5885-6https://msuir.usm.md/handle/123456789/16270https://doi.org/10.1109/SMICND.2000.890206PbTe(III) thin films were grown by the hot wall beam epitaxy (HWBE) technique on Si( III ) substrates using intermediate BaF2/CaF2 buffers grown by MBE. The best PbTe layers exhibit the high resolution X-ray rocking curve linewidth of about 130 arcsec,the low temperature Hall mobility of 8 x l d cm2Ns, and an excellent surface morphology with the roughness of a few angstrom as it was determined by the atomic force microscopy (AFM). The results indicate that high-quality PbTe films can be obtained on fluoride covered Si(III ) substrates by simple and cheap HWBE method.enArticle