Ho, J.Becker, J.Leedahl, B.Boukhvalov, D. W.Zhidkov, I. S.Kukharenko, A. I.Kurmaev, E. Z.Cholakh, S. O.Gavrilov, N. V.Brinzari, VladimirMoewes, A.2021-12-032021-12-032019HO, J., BECKER, J. et al. Electronic structure and structural defects in 3d-metal doped In2O3. In: Journal of Materials Science: Materials in Electronics. 2019, Vol. 30, Issue 15, pp. 14091–14098. ISSN 0957-4522.0957-4522https://link.springer.com/article/10.1007/s10854-019-01775-2https://msuir.usm.md/handle/123456789/5086Dilute magnetic semiconductors (DMSs) are a highly attractive field of research due to their potential to open new technological functionality. Here, we perform a systematic study of In2O3 thin films with dopant ions of Mn, Co, Ni, and Fe to investigate the unique interaction of each of these ions and their incorporation into the semiconductor lattice. We report substitutional positioning of Fe atoms into the In3+ site and a mixture of interstitial, metallic clustering, and substitutional positioning for Co, Mn, and Ni, discriminating between oxidation states for all dopant atoms.endilute magnetic semiconductorssemiconductorArticle