Belenchuk, AlexandrShapoval, Oleg M.Zasavitsky, E.Vatavu, SergiuKiritsa, ArcadyMoshnyaga, V.2024-09-042024-09-042018-05-24BELENCHUK, Alexandr; Oleg M. SHAPOVAL; E.ZASAVITSKY; Sergiu VATAVU; Arcady KIRITSA și V.MOSHNYAGA. Oxygen-dependent formation of vo2 thin films by metalorganic aerosol deposition. In: Telecommunications, Electronics and Informatics: 6th International Conference, Chisinau, May 24-27, 2018. Chisinau: UTM, 2018. pp.115-118.978-9975-45-540-4https://msuir.usm.md/handle/123456789/15938BELENCHUK, Alexandr; Oleg M. SHAPOVAL; E.ZASAVITSKY; Sergiu VATAVU; Arcady KIRITSA și V.MOSHNYAGA. Oxygen-dependent formation of vo2 thin films by metalorganic aerosol deposition. In: Telecommunications, Electronics and Informatics: 6th International Conference, Chisinau, May 24-27, 2018.Chisinau: UTM, 2018. pp.115-118.We report on the growth and properties of vanadium dioxide (VO2) on amorphous and oriented substrates by the low-cost and industry-oriented method of metalorganic aerosol deposition (MAD). X-ray diffraction and temperature- dependent Raman spectroscopy confirm formation of single phase tin films. Abrupt change of resistance by 5×103 times and steep drop of infrared transmission from 49 to 10% at 1700 nm pave the way for application of MAD technique in fabrication of VO2-based optoelectronic and thermochromic devices, such as “smart windows”.enVO2 thin filmsmetalorganic aerosol depositionsurface morphologycrystal structureRaman spectroscopyresistance switchingoptical transmittanceOXYGEN-DEPENDENT FORMATION OF VO2 THIN FILMS BY METALORGANIC AEROSOL DEPOSITIONArticle