Sprincean, VeaceslavLeontie, LiviuCaraman, IulianaUntila, DumitruGirtan, MihaelaGurlui, SilviuLisnic, PetruDoroftei, CorneliuCârlescu, AurelianIaconi, FeliciaCaraman, Mihail2024-09-132024-09-132022SPRINCEAN, Veaceslav; Liviu LEONTIE; Iuliana CARAMAN; Dumitru UNTILA ; Mihaela GIRTAN; Silviu GURLUI; Petru LISNIC; Corneliu DOROFTEI; Aurelian CÂRLESCU; Felicia IACOMI și Mihail CARAMAN. Optical and Photosensitive Properties of Flexible n (p)–InSe/In2O3 Heterojunctions. Materials, 2022. vol. 15, pp. 1-13. ISSN 1996-1944.1996-1944https://msuir.usm.md/handle/123456789/16033https://doi.org/10.3390/ma15093140SPRINCEAN, Veaceslav; Liviu LEONTIE; Iuliana CARAMAN; Dumitru UNTILA ; Mihaela GIRTAN; Silviu GURLUI; Petru LISNIC; Corneliu DOROFTEI; Aurelian CÂRLESCU; Felicia IACOMI și Mihail CARAMAN. Optical and Photosensitive Properties of Flexible n (p)–InSe/In2O3 Heterojunctions. Materials, 2022. vol. 15, pp. 1-13. ISSN 1996-1944.In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)–InSe/In2O3 heterojunctions, obtained by heat treatment of single- crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a water-vapor- and oxygen-enriched at- mosphere, are investigated. The Raman spectrum of In2O3 layers on an InSe:Sn substrate, in the wavelength range of 105–700 cm−1, contains the vibration band characteristic of the cubic (bcc-In2O3) phase. As revealed by EDX spectra, the In2O3 layer, ~2 μm thick, formed on InSe:Cd contains an ~18% excess of atomic oxygen. The absorption edge of InSe:Sn (Cd)/In2O3 structures was stud- ied by ultraviolet reflectance spectroscopy and found to be 3.57 eV and ~3.67 eV for InSe:Cd and InSe:Sn substrates, respectively. By photoluminescence analysis, the influence of doping impuri- ties on the emission bands of In2O3:Sn (Cd) was revealed and the energies of dopant-induced and oxygen-induced levels created by diffusion into the InSe layer from the InSe/In2O3 interface were determined. The n (p)–InSe/In2O3 structures display a significantly wide spectral range of photosen- sitivity (1.2–4.0 eV), from ultraviolet to near infrared. The influence of Cd and Sn concentrations on the photosensitivity and recombination of nonequilibrium charge carriers in n (p)–InSe layers from the heterojunction interface was also studied. The as-obtained nanosized InSe/In2O3 structures are suitable for optoelectronic applications.enchalcogenidesheterojunctionsthin filmssingle crystalsoptical propertiephotolumi- nescencephotosensitivityArticle