Evtodiev, IgorLeontie, LiviuCaraman, MihailStamate, Marius D.Aramă, Efim2024-09-162024-09-162009EVTODIEV, Igor; Liviu LEONTIE; Mihail CARAMAN; Marius D. STAMATE și Efim ARAMĂ. Optical properties of p -GaSe single crystals doped with Te. Journal of Applied Physics, 2009. vol. 105, pp. 1-6. ISSN 0021-8979.0021-8979https://msuir.usm.md/handle/123456789/16039https://doi.org/10.1063/1.3068464EVTODIEV, Igor; Liviu LEONTIE; Mihail CARAMAN; Marius D. STAMATE și Efim ARAMĂ. Optical properties of p -GaSe single crystals doped with Te. Journal of Applied Physics, 2009. vol. 105, pp. 1-6. ISSN 0021-8979.Optical absorption in the region of fundamental absorption edge and photoluminescence at 78 and 293 K of p-GaSe crystals doped with Te 0.05, 0.10, and 0.05 at. % have been studied. At low concentrations 0.05 at. %, Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B at 2.000 eV and C at 1.700 eV. The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV for T 150 K and 84 and 62 meV for T 150 K, respectively.enArticle