Untila, Dumitru2021-06-292021-06-292012UNTILA, Dumitru. Absorbtia luminii si fotoluminescenta cristalelor GaSe: Eu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2012, nr. 2(52), pp. 70-75. ISSN 1857-2073.1814-3237http://studiamsu.eu/nr-2-52-2012/https://msuir.usm.md/handle/123456789/4604GaSe monocrystals doped with 0,025%, 0,068%, 0,49% at. Eu, optically transparent in wavelengths domain λ>650 nm, were grown by Bridgman method. In addition to structural defects in ...Se-Ga-Ga-Se... stratified package, introduction of the Eu impurities in GaSe leads to the formation of Eu3+ luminescence centers. On the elementary package surface of GaSe doped with 0,49% at. Eu, there are neutral Eu atoms, what by thermic treatment at 400÷450ºC are forming a Eu2O3 and Ga2O3 composite layer.romonocristalele GaSemetoda Bridgmanioni Eu3+Absorbția luminii și fotoluminescența cristalelor GaSe: Eu [Articol]Article