Raevschi, SimionKompan, MihailZhilyaev, YuriiGorceac, LeonidBotnariuc, Vasile2021-06-142021-06-142011RAEVSCHI, Simion; KOMPAN, Mihail, et.al. Evoluarea particulelor dispersate de ALN depuse pe si prin metoda HVPE la etapa de formare a stratului continuu. In: Studia Universitatis Moldaviae. Seria Ştiinţe Exacte şi Economice: Matematică. Informatică. Fizică. Economie. Revistă științifică. 2011, nr. 2(42), pp. 84-88. ISSN 1857-2073.1857-2073http://studiamsu.eu/nr-2-42-2011/https://msuir.usm.md/handle/123456789/4432Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100o C. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant.rostraturi de AlNmetoda HVPEmetoda AFMArticle